Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü; Yuanjie Lü; Qiang Wang; Jianfei Li; Zhihong Feng; Xiangang Xu; Ziwu Ji

doi:doi:10.3788/col201614.083501

Chinese Optics Letters, 2016, 14 (8): 083501, Published Online: Aug. 4, 2016

Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü ¹Yuanjie Lü ²Qiang Wang ¹Jianfei Li ¹Zhihong Feng ²Xiangang Xu ³Ziwu Ji ¹

Author Affiliations

¹ School of Physics, Shandong University, Jinan 250100, China

² National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

³ Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

Abstract

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Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(8): 083501.