激光与光电子学进展, 2016, 53 (8): 081401, 网络出版: 2016-08-11   

脉冲LD端面抽运变热导率方片Yb:YAG晶体温度场

Temperature Field of Pulsed LD End-Pumped Square Yb:YAG Crystal with Variable Thermal-Conductivity
作者单位
1 西安建筑科技大学理学院, 陕西 西安 710055
2 西安建筑科技大学应用物理研究所, 陕西 西安 710055
摘要
对脉冲激光二极管(LD)端面抽运变热导率方片Yb:YAG晶体的温度场进行了分析和研究,建立了端面绝热、周边恒温的热传导模型,采用半解析理论,结合牛顿法得到了晶体的温度场分布,分析了不同的抽运功率、超高斯阶次、光斑半径和晶体尺寸因素对晶体温度场的影响。计算结果表明,当采用抽运功率为80 W、超高斯半径为400 μm、超高斯阶次为3的脉冲激光二极管对晶体进行抽运时,在将Yb:YAG晶体的热导率分别视为常量和非常量的情况下,该晶体在抽运端面处获得的最大温升分别为31.69,35.66 ℃。研究结果为激光器的设计提供了一定的理论指导。
Abstract
The temperature field of a pulsed laser diode (LD) end-pumped Yb:YAG crystal with variable thermal conductivity is studied. A thermal conduction model with heat-insulted end faces and constant peripheral temperature is built. Based on the semi-analytical theory and by means of Newton′s method, the temperature field distribution of the crystal is obtained. The influences of pump power, super-Gaussian order, spot radius, and crystal size on the temperature field are analyzed. The calculation results show that, when the crystal is pumped by a pulsed LD with super-Gaussian order of three, pump power of 80 W, and radius of 400 μm, and under the condition that the thermal-conductivity is constant or non-constant, the maximum temperature increase at the pumped end faces is 31.69 and 35.66 ℃, respectively. The research results provide certain theoretical guidance to the design of lasers.

耿鹰鸽, 李隆, 潘晓瑞, 傅依柳. 脉冲LD端面抽运变热导率方片Yb:YAG晶体温度场[J]. 激光与光电子学进展, 2016, 53(8): 081401. Geng Yingge, Li Long, Pan Xiaorui, Fu Yiliu. Temperature Field of Pulsed LD End-Pumped Square Yb:YAG Crystal with Variable Thermal-Conductivity[J]. Laser & Optoelectronics Progress, 2016, 53(8): 081401.

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