用水平开管液相外延技术在锑化铟衬底上用富铟锑化铟母液生长锑化铟薄膜材料，薄膜材料具有n-on-p 结构，衬底为p 型层，掺Ge，浓度1×1015～5×1016 cm－3；薄膜为n 型层，掺Te，薄膜面积20 cm×25 cm，厚度2～3 ?m，表面平整度±0.2 ?m，浓度1×1017～5×1018 cm－3。n-on-p 锑化铟薄膜材料能满足制作的中波红外焦平面器件要求。

InSb film has been grown from In-rich solution in open-tube sliding-boat LPE system on InSb substrates. It has n on p structure. The substrate is Ge-doped with impurity concentration ranges from 1×1015 to 5×1016 cm－3, and the InSb epitaxial layer is grown upon the 20 cm×25 cm p- InSb substrate, which has the thickness of 2-3 ?m with the surface flatness and the net donor concentration ranges from 1×1017 to 5×1018 cm－3. The results show that epilayer can satisfy the fabrication of focus plane arrays.