介绍了由双量子阱非对称波导结构外延片刻蚀成的带有脊形波导结构的锥形半导体激光器。该激光器有效抑制了p型区域对激光的影响, 减小了半导体激光快轴方向的发散角, 同时采用脊形结构和锥形结构的组合获得了高亮度激光。实验中, 在电流7 A时获得了中心波长963 nm、连续功率4.026 W的激光输出。测得慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad 和0.668 mm·mrad。

Tapered diode laser with ridge waveguide was introduced and formed through etching the wafer with asymmetrical waveguide structure and double quantum walls. In the laser, the negative effect of p-cladding layer was decreased and the vertical divergence angle was reduced. The high brightness power is arrived on account of the combination of the ridge waveguide and the taper waveguide. In experiment, the laser delivers 976 nm and 4 W CW at 7 A current. The slow direction beam quality and the fast direction beam quality are measured of 1.593 mm·mrad and 0.668 mm·mrad, respectively.