激光技术, 2016, 40 (5): 762, 网络出版: 2016-08-29   

水射流激光复合刻蚀陶瓷的研究

Research of water jet-laser complex etching of ceramics
作者单位
江南大学 机械工程学院, 无锡 214122
摘要
为了改善激光直接刻蚀过程中形貌普遍较差的问题, 采用水射流激光复合刻蚀的方法,以SiC复相陶瓷和Al2O3陶瓷为研究材料, 分析了有无水射流条件下的形貌差异以及不同成分陶瓷的形貌差异, 并在此基础上研究了水射流流速对刻蚀深度和蚀除量的影响。结果表明,直接刻蚀时, 大量熔渣附于刻蚀表面, 刻蚀形貌较差, SiC复相陶瓷60%以上直接气化分解, 熔渣较少, 形貌稍好于Al2O3陶瓷; 复合刻蚀时, 刻蚀形貌有所变好, 且水射流流速在24m/s时的形貌要好于16m/s时的; 水射流流速越大, 材料的刻蚀深度和蚀除量越小, 流速每增大2m/s时, 材料的蚀除量平均减少0.066mm3左右, 相同流速下, SiC复相陶瓷的蚀除量比Al2O3陶瓷大0.4mm3左右。此研究对提高刻蚀形貌和分析不同陶瓷的刻蚀机理是有帮助的。
Abstract
In order to improve the problems that the bad morphologies are very bad in the process of laser direct etching, the method of water jet-laser complex etching was adopted. With SiC composite ceramics and Al2O3 ceramics as studying object materials, the etched morphologies of different componential ceramics with or without water jet were analyzed. On this basis, the effects of velocity of water jet on the etched depth and removal amount were studied. The results show that in the process of laser direct etching, a large amount of slag is attached to the etched surface, the etched morphologies are very bad, more than 60% of SiC composite ceramics are directly decomposed, the slag is less, so the morphology is better than Al2O3 ceramics slightly. In the process of water jet-laser complex etching, the etched morphologies are both turned better, and the morphology when velocity of water jet is 24m/s is better than that when 16m/s. The velocity of water jet is bigger, the etched depth and removal amount are smaller. The velocity of water jet increases every 2m/s, the removal amount reduces by an average of about 0.066mm3. In the case of the same velocity of water jet, the removal amount of SiC composite ceramics is about 0.4mm3, bigger than Al2O3 ceramics. This study is helpful to improve the etched morphologies and analyze the etched mechanism of different ceramics.

谢兵兵, 袁根福. 水射流激光复合刻蚀陶瓷的研究[J]. 激光技术, 2016, 40(5): 762. XIE Bingbing, YUAN Genfu. Research of water jet-laser complex etching of ceramics[J]. Laser Technology, 2016, 40(5): 762.

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