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GaN光电阴极测试与评估技术研究

Measurement and Evaluation of GaN Photocathodes

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摘要

GaN光电阴极的制备成功与否需用科学手段加以评估。在GaAs光电阴极多信息量测试系统的基础上, 增设紫外光源, 并对评估软件重新加以编写, 设计出GaN光电阴极测试评估系统。利用该系统测试了GaN光电阴极在制备过程中的Cs源电流、O源电流、光电流和激活室真空度等多个信息量, 并利用激活后的光谱响应对阴极进行了评估, 实现了对GaN光电阴极性能的客观评价。

Abstract

It is necessary to evaluate GaN photocathode with scientific method. The measurement and evaluation system for GaN photocathode was designed based on multi-information measurement system for GaAs photocathode by adding UV light source and re-programming evaluation software. Multiple measurements such as Cs source current, O source current, photocurrent and vacuum of activation chamber of GaN photocathode in preparation were tested in the measurement and evaluation system, and the evaluations were carried out on GaN photocathodes by their activated spectral response.

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中图分类号:O433

DOI:10.16818/j.issn1001-5868.2016.03.020

所属栏目:材料、结构及工艺

基金项目:国家自然科学基金项目(61171042)

收稿日期:2015-09-14

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作者单位    点击查看

李飙:商丘师范学院 物理与电气信息学院, 河南 商丘 476000
任艺:商丘职业技术学院 机电系, 河南 商丘 476000
常本康:南京理工大学 电子工程与光电技术学院, 南京 210094
陈文聪:商丘师范学院 物理与电气信息学院, 河南 商丘 476000

联系人作者:李飙(libiao2006@126.com)

备注:李飙(1974-), 男, 博士, 讲师, 主要从事光电器件性能评估与检测方面的研究。

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引用该论文

LI Biao,REN Yi,CHANG Benkang,CHEN Wencong. Measurement and Evaluation of GaN Photocathodes[J]. Semiconductor Optoelectronics, 2016, 37(3): 387-391

李飙,任艺,常本康,陈文聪. GaN光电阴极测试与评估技术研究[J]. 半导体光电, 2016, 37(3): 387-391

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