研究了一种新型大功率激光脉冲二极管的输出特性, 该激光二极管主要用于触发工作在高增益模式下的砷化镓光导开关。研制了基于射频金属-氧化物半导体场效应管的激光二极管驱动电路, 可以为激光二极管提供上升沿、半高宽和峰值电流分别为4 ns,20 ns和130 A的脉冲驱动电流。研究了激光二极管输出的激光脉冲波形、能量、功率、光场分布等特性, 并在Blumlein传输线结构中, 研究了该大功率激光脉冲二极管的输出特性对工作于高增益模式下的光导开关的导通电阻、开关抖动等主要导通性能参数的影响规律。实验结果表明, 激光脉冲的能量和功率越大, 光斑面积越大、分布越均匀, 在相同偏置电压条件下, 光导开关的导通性能越好。

A new kind of high-power pulse laser diode has been researched, and it is mainly used for triggering high-gain gallium arsenide photoconductive semiconductor switch (GaAs PCSS) in experiments. The driver of the laser diode is based on RF MOSFET and it provides an ultra-fast pulse drive current for the laser diode, and the rise-time, FWHM and peak current of the drive current are 4 ns, 20 ns and 130 A, respectively. The characteristics of the laser diode have been researched, including laser pulse waveform, energy, power, optical field distribution, and so on. In the Blumlein transmission line structure, the influences of bias voltage, laser spot size, laser energy and laser power on the on-state resistance and jitter of the GaAs PCSS are analyzed. Experiment shows that, lager and more uniform laser spot, higher laser energy and power all help to improve the performance of PCSS.