红外与毫米波学报, 2016, 35 (4): 386, 网络出版: 2016-09-28
分子束外延生长InAsSb材料的组分控制
Composition control of InAsxSb1-x grown by molecular beam epitaxy
摘要
采用分子束外延方法在GaAs和GaSb衬底上生长了一系列InAsSb薄膜,研究了Sb组分与Sb4束流间关系.实验发现,在分子束外延生长中,相比As原子, Sb原子更易并入晶格中.利用该特性可较好实现InAsSb材料的组分控制.
Abstract
The molecular beam epitaxy growth of InAsSb film is presented. Dependence of Sb compositions on Sb4 fluxes was studied. Utilizing the high combination tendency of In and Sb atoms, the composition of InAsSb layer is highly controlled.
孙庆灵, 王禄, 姚官生, 曹先存, 王文奇, 孙令, 王文新, 贾海强, 陈弘. 分子束外延生长InAsSb材料的组分控制[J]. 红外与毫米波学报, 2016, 35(4): 386. SUN Qing-Ling, WANG Lu, YAO Guan-Sheng, CAO Xian-Cun, WANG Wen-Qi, SUN Ling, WANG Wen-Xin, JIA Hai-Qiang, CHEN Hong. Composition control of InAsxSb1-x grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2016, 35(4): 386.
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