光子学报, 2016, 45 (9): 0914001, 网络出版: 2016-10-19
2 μm InGaAsSb/AlGaAsSb双波导半导体激光器的结构设计
Simulation Analysis of 2 μm InGaAsSb/AlGaAsSb Laser Diode with Dual Waveguide
半导体激光器 InGaAsSb/AlGaAsSb量子阱 双波导结构 低垂直发散角 数值模拟 Semiconductor laser InGaAsSb/AlGaAsSb quantum well Dual waveguide Low vertical divergence Simulation
摘要
为了提高2 μm InGaAsSb/AlGaAsSb 半导体激光器的最大输出功率,减小远场垂直发散角并实现单模稳定输出, 在非对称波导结构的基础上设计了具有双波导结构的2 μm InGaAsSb/AlGaAsSb半导体激光器.同时, 利用相关的物理模型及SimLastip程序语言构建了InGaAsSb/AlGaAsSb Macro文件, 利用SimLastip软件对具有不同结构的2 μm InGaAsSb/AlGaAsSb 半导体激光器进行了数值模拟分析.研究结果表明, 双波导结构可以将半导体激光器的有源区限制因子由0.019 2减小至0.011 3, 器件的最大输出功率提高了1.7倍, 远场垂直发散角由57°减小到48°, 器件性能得到了改善.
Abstract
The lower waveguide of 2 μm InGaAsSb/AlGaAsSb laser diode is optimized based on the research of the asymmetric waveguide. With the introduction of dual waveguide, the 2 μm InGaAsSb/AlGaAsSb laser diode has a high output power, a small far field divergence and good single-mode characteristics. The SimLastip simulation of the 2 μm InGaAsSb/AlGaAsSb laser diode with different waveguide structures were established using the related physical model and software design language. And the results indicate that the dual waveguide can almost double the laser power by decreasing the confinement factors of active region from 0.019 2 to 0.011 3 and obtain the good beam quality with small far field vertical divergence angle of 48°. The dual waveguide can favorably improve the performance of 2 μm InGaAsSb/AlGaAsSb laser diode.
安宁, 韩兴伟, 刘承志, 范存波, 董雪, 宋清丽. 2 μm InGaAsSb/AlGaAsSb双波导半导体激光器的结构设计[J]. 光子学报, 2016, 45(9): 0914001. AN Ning, HAN Xing-wei, LIU Cheng-zhi, FAN Cun-bo, DONG Xue, SONG Qing-li. Simulation Analysis of 2 μm InGaAsSb/AlGaAsSb Laser Diode with Dual Waveguide[J]. ACTA PHOTONICA SINICA, 2016, 45(9): 0914001.
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