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Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

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Abstract

Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using plasma-assisted molecular beam epitaxy (PA-MBE) system. The InGaN quantum dots (QDs) are disk-like observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The diameter of QDs can be controlled by the growth conditions of nanowires (NWs), while the thickness of QDs can be controlled by the growth time of InGaN. Temperature-dependent photoluminescence (TDPL) measurements demonstrate that the PL peak of DINWs with small and uniform sizes shows a general red shift with increasing temperature. However, the PL peak of DINWs with non-uniform sizes shows an abnormal blue shift with increasing temperature, which is due to different internal quantum efficiencies of the DINWs with different sizes.

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DOI:10.1007/s12200-016-0613-4

所属栏目:RESEARCH ARTICLE

基金项目:This work was supported by the National Basic Research Program of China (No. 2013CB632804), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004 and 61307024), and the High Technology Research and Development Program of China (No. 2012AA050601

收稿日期:2016-01-28

修改稿日期:2016-02-15

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作者单位    点击查看

Yanxiong E:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Zhibiao HAO:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Jiadong YU:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Chao WU:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Lai WANG:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Bing XIONG:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Jian WANG:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Yanjun HAN:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Changzheng SUN:Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China
Yi LUO

联系人作者:Zhibiao HAO(zbhao@tsinghua.edu.cn)

备注:Yanxiong E received his B.S. degree in 2011 from Department of Electronic Engineering, Tsinghua University, and now he is a Ph.D. candidate student in the same Department. His research area is molecular beam epitaxial growth of III-nitrides nanowires and InGaN/GaN nanowire quantum dots and their physical properties.

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引用该论文

Yanxiong E,Zhibiao HAO,Jiadong YU,Chao WU,Lai WANG,Bing XIONG,Jian WANG,Yanjun HAN,Changzheng SUN,Yi LUO. Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE[J]. Frontiers of Optoelectronics, 2016, 9(2): 318-322

Yanxiong E,Zhibiao HAO,Jiadong YU,Chao WU,Lai WANG,Bing XIONG,Jian WANG,Yanjun HAN,Changzheng SUN,Yi LUO. Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE[J]. Frontiers of Optoelectronics, 2016, 9(2): 318-322

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