原子层沉积（ALD）方法可以制备出高质量薄膜, 被认为是可应用于柔性有机电致发光器件（OLED）最有发展前景的薄膜封装技术之一。本文采用原子层沉积（ALD）技术, 在低温（80 ℃）下, 研究了Al2O3及TiO2 薄膜的生长规律, 通过钙膜水汽透过率（WVTR）、薄膜接触角测试等手段, 研究了不同堆叠结构的多层Al2O3/TiO2复合封装薄膜的水汽阻隔特性, 其中5 nm/5 nm×8 dyads（重复堆叠次数）的Al2O3/TiO2叠层结构薄膜的WVTR达到2.1×10-5 g/m2/day。采用优化后的Al2O3/TiO2叠层结构薄膜对OLED器件进行封装, 实验发现封装后的OLED器件在高温高湿条件下展现了较好的寿命特性。

Atomic layer deposition (ALD) is considered as one of the most promising thin-film encapsulation technologies for flexible organic light-emitting diode (OLED) device because of high-quality films formed. In this work, different laminated structures of Al2O3/TiO2 composite film were prepared at low temperature (80 ℃) by ALD method. The growth mechanism of Al2O3 and TiO2 film was studied. The water vapor barrier properties of the different stacked structures of composite Al2O3/TiO2 thin film were studied by the calcium film, which were analyzed by water vapor transmission rate (WVTR) test and contact angle measurements. The WVTR of the 5 nm/5 nm×8 dyads Al2O3/TiO2 composite thin film was 2.1×10-5 g/m2/day and the OLED devices encapsulated by this optimized Al2O3/TiO2 structure exhibited better lifetime characteristics in high temperature and high humidity test.