液晶与显示, 2016, 31 (6): 558, 网络出版: 2016-11-14  

氧分压对铟镓锌氧薄膜晶体管性能影响

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor
作者单位
京东方科技集团股份有限公司, 北京 100176
摘要
采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管(IGZO-TFT),通过调节IGZO薄膜工艺中氧分压, 研究不同氧分压对TFT器件电学性能的影响。实验结果表明, 所有器件都展现出良好的电学特性, 随着氧分压从10%增加到50%, TFT的阈值电压由0.5 V增加到2.2 V, 而亚阈值摆幅没有发生变化。在栅极施加30 V偏压3 600 s后, 随着氧分压的增加, 阈值电压向正向的漂移量由1 V增加到9 V。经过分析得出高氧分压的IGZO-TFT器件中载流子浓度低, 建立相同导电能力的沟道时所需要栅极电压会更大, 阈值电压会增加。而在金属-绝缘层-半导体(MIS)结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态, 栅介质层(GI)会俘获更多的电子, 造成阈值电压漂移量较大的现象。
Abstract
Indium gallium zinc oxide thin film transistors (IGZO-TFT) were fabricated with the standard process of TFT-LCD arrays substrate.The effects of different oxygen partial pressure on IGZO-TFT performance were investigated by adjusting the oxygen partial pressure in IGZO film process. All devices showed good electrical properties.The threshold voltage of TFT was increased from 0.5 V to 2.2 V as the oxygen partial pressure was increased from 10% to 50%,whereas the sub-threshold swing had not changed. Applying a positive gate bias of 30 V for 3 600 s, with the increase of the oxygen partial pressure, the positive shift of threshold voltage of IGZO-TFT was increased from 1 V to 9 V. The carrier concentration in TFT with higher oxygen partial pressure is lower. So it requires higher gate voltage for building the channel with the same conductive capability, and therefore the threshold voltage will be higher. In the Metal-Insulator-Semiconductor (MIS) structure, the lower carrier concentration leads electron accumulation layer to be thicker. There will be more energy states in band bending part of active layer which are the same as electron traps of gate insulator (GI). Consequently, it is possible that more electrons are captured by GI, and shift of threshold voltage will be greater.

孙建明, 周婷婷, 任庆荣, 胡合合, 陈宁, 宁策, 王路, 刘文渠, 李东升. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016, 31(6): 558. SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong, HU He-he, CHEN Ning, NING Ce, WANG Lu, LIU Weng-qu, LI Dong-seng. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(6): 558.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!