研究了可取代多晶硅扩散掺杂的离子注入掺杂工艺, 通过两种掺杂方式对CCD栅介质损伤、多晶硅接触电阻及均匀性等关键参数影响的对比研究, 发现离子注入掺杂制作的多晶硅栅质量优于扩散掺杂制作的多晶硅栅, 这有利于CCD输出均匀性的提高。对两种多晶硅掺杂方式的工艺集成条件进行对比, 多晶硅掺杂采用离子注入方式其工艺步骤更简单, 工艺集成度更高。

Studied could replace polysilicon diffusion doping ion implantation process, through two kinds of doping methods comparative study of the impact of key parameters, such as CCD gate dielectric damage, polysilicon contact resistance, uniformity, found that the ion implantation doping poly gate made of quality is better than that of diffusion of polysilicon gate, this contributes to the uniformity of the CCD output increase. Through comparative study on the two mixed way of process integration, polycrystalline silicon doping process steps by using the way of ion implantation is simpler, more integrated process.