Frontiers of Optoelectronics, 2016, 9 (3): 346, 网络出版: 2016-11-23  

Principle and applications of semiconductor optical amplifiers-based turbo-switches

Principle and applications of semiconductor optical amplifiers-based turbo-switches
作者单位
State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China
摘要
All-optical high-speed turbo-switches can effectively increase the switching speed using cascaded semiconductor optical amplifiers (SOAs). The overall recovery time or the bandwidth of turbo-switch was numerically analyzed with time-domain and frequencydomain SOA models. The turbo-switch was explored from the fundamental carrier dynamics in SOAs for the purpose of further increasing its operation speed. An integrated turbo-switch was also been proposed and demonstrated, where a phase adjustable Mach-Zehnder interferometer (MZI) was applied as an optical band-pass filter between SOAs. Wavelength conversion was first demonstrated at 84.8 Gbit/s using the integrated turbo-switch.
Abstract
All-optical high-speed turbo-switches can effectively increase the switching speed using cascaded semiconductor optical amplifiers (SOAs). The overall recovery time or the bandwidth of turbo-switch was numerically analyzed with time-domain and frequencydomain SOA models. The turbo-switch was explored from the fundamental carrier dynamics in SOAs for the purpose of further increasing its operation speed. An integrated turbo-switch was also been proposed and demonstrated, where a phase adjustable Mach-Zehnder interferometer (MZI) was applied as an optical band-pass filter between SOAs. Wavelength conversion was first demonstrated at 84.8 Gbit/s using the integrated turbo-switch.

Xuelin YANG, Weisheng HU. Principle and applications of semiconductor optical amplifiers-based turbo-switches[J]. Frontiers of Optoelectronics, 2016, 9(3): 346. Xuelin YANG, Weisheng HU. Principle and applications of semiconductor optical amplifiers-based turbo-switches[J]. Frontiers of Optoelectronics, 2016, 9(3): 346.

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