使用一维ZnO纳米线和二维石墨烯复合结构集成到p-GaN表面来同时实现电流扩展和提高LED光提取效率。通过两组有无ZnO纳米线器件的对比, 发现ZnO纳米线使器件的光提取效率提高了30%. 通过分析两组器件的开启电压、工作电压和反向漏电流等关键参数, 验证了本结构应用于GaN LED不会恶化其电性能。本文所采用的复合结构用于GaN LED, 同时达到了良好欧姆接触、避免使用ITO和增强出光的效果。

By using one-dimensional ZnO nanowires and two-dimensional graphene composite structure to integrate onto p-GaN surface, the current expansion and the efficiency improvement of LED light extraction were both achieved. Comparing the devices with or without ZnO nanowires, it was found that ZnO nanowires could increase the light extraction efficiency of GaN LED by 30%. The key parameters, such as opening voltage, working voltage and reverse leakage current of the two type of devices were analyzed, and the results verified that the structure used in GaN LED didnt deteriorate the electrical properties of LED. The complex structure adopted in this paper for GaN LED can not only achieve a good Ohmic contact without the using of ITO, but also enhance the extraction of light.