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磁控共溅射低温制备多晶硅薄膜及其特性研究

Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature

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摘要

多晶硅在光电子器件领域具有较为重要的用途。 利用磁控溅射镀膜系统, 通过共溅射技术在玻璃衬底上制备了非晶硅铝(α-Si/Al)复合膜, 将Al原子团包覆在α-Si基质中, 膜中的Al含量可通过Al和Si的溅射功率比来调节。 复合膜于N2气氛中进行350 ℃, 10 min快速退火处理, 制备出了多晶硅薄膜。 利用X射线衍射仪、 拉曼光谱仪和紫外-可见光-近红外分光光度计对多晶硅薄膜的性能进行表征, 研究了Al含量对多晶硅薄膜性能的影响。 结果表明: 共溅射法制备的α-Si/Al复合膜在低温光热退火下晶化为晶粒分布均匀的多晶硅薄膜; 随着膜中Al含量逐渐增加, 多晶硅薄膜的晶化率、 晶粒尺寸逐渐增加, 带隙则逐渐降低; Al/Si溅射功率比为0.1时可获得纳米晶硅薄膜, Al/Si溅射功率比为0.3时得到晶化率较高的多晶硅薄膜, 通过Al含量的调节可实现多晶硅薄膜的晶化率、 晶粒尺寸及带隙的可控。

Abstract

The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 ℃ for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.

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中图分类号:TN304

DOI:10.3964/j.issn.1000-0593(2016)03-0635-05

基金项目:国家自然科学基金项目(U1037604), 云南师范大学研究生创新资金项目资助

收稿日期:2014-10-11

修改稿日期:2015-02-08

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段良飞:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650092云南师范大学太阳能研究所, 云南 昆明 650092
杨 雯:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650092云南师范大学太阳能研究所, 云南 昆明 650092
张力元:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650092云南师范大学太阳能研究所, 云南 昆明 650092
李学铭:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650092云南师范大学太阳能研究所, 云南 昆明 650092
陈小波:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650092云南师范大学太阳能研究所, 云南 昆明 650092
杨培志:可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650092云南师范大学太阳能研究所, 云南 昆明 650092

联系人作者:段良飞(liangfeiduan@hotmail.com)

备注:段良飞, 1988年生, 云南师范大学太阳能研究所硕士研究生

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引用该论文

DUAN Liang-fei,YANG Wen,ZHANG Li-yuan,LI Xue-ming,CHEN Xiao-bo,YANG Pei-zhi. Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature[J]. Spectroscopy and Spectral Analysis, 2016, 36(3): 635-639

段良飞,杨 雯,张力元,李学铭,陈小波,杨培志. 磁控共溅射低温制备多晶硅薄膜及其特性研究[J]. 光谱学与光谱分析, 2016, 36(3): 635-639

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