以硅为衬底, 采用射频磁控溅射技术制备了TiO2薄膜, 利用扫描电子显微镜及拉曼光谱对退火前后的TiO2进行表征与结构分析。结果表明, 退火后的TiO2具有良好的结晶特性, 且呈锐钛矿结构。在此薄膜工艺条件下, 以TiO2为半导体层在玻璃基底上制备了Al/TiO2/Pt肖特基二极管, 并在153~433K温度范围内对其进行了I-V测试, 得到以下结果: 在整个温度范围内, Al/TiO2/Pt肖特基二极管均表现出良好的整流特性; 其理想因子随温度升高而降低, 势垒高度随温度升高而升高; 在433K下, 理想因子为1.31, 势垒高度为0.73, 表明此肖特基二极管已接近理想的肖特基二极管。

TiO2 thin films were prepared on glass substrate by RF magnetron sputtering. Scanning electron microscopy figures and Raman spectrums of TiO2 thin films before and after annealing process were studied to identify the structure of TiO2 thin films. The results show that the film after annealing treatment was anatase, representing good crystal structure. Al/TiO2/Pt schottky diode was then prepared based on these parameters and the related I-V-T tests were carried out at the temperature of 153~433K. The following results were obtained: Al/TiO2/Pt schottky diode possesses great rectifying effect under all temperature; the ideality factor n increases as temperature rises, while schottky barrier height (SBH) decreases; when T=433K, n is 1.31 and SBH is 0.73, indicating this schottky diode is close to an ideal Schottky diode.