液晶与显示, 2016, 31 (12): 1112, 网络出版: 2016-12-30  

排气方式及工艺参数对等离子体刻蚀a-Si均一性的影响

Influence of exhaust mode and process on uniformity of plasma etching a-Si
作者单位
中航光电子有限公司, 上海 201100
摘要
本文对在等离子体刻蚀工艺中, 功率、压强、气体比例重要参数对a-Si刻蚀均一性的影响进行了研究。采用PECVD成膜、RIE等离子体刻蚀, 并通过台阶仪和光谱膜厚测定仪对膜厚进行表征。结果表明压强在10~15 Pa, 功率在5 500~6 500 W的参数区间, a-Si刻蚀均一性波动不大, 适合工业化生产。a-Si刻蚀速率及刻蚀均一性对气体比例较为敏感, SF6∶HCl=800∶2 800 mL/min时a-Si刻蚀均一性为最佳。四角排气方式对维持等离子体浓度作用明显, 有利于刻蚀均一性的提升。四周排气方式会破坏等离子体浓度进而破坏a-Si刻蚀的均一性。
Abstract
The influence of power, pressure and gas ratio on uniformity plasma etching a-Si was studied. The results show that the process of pressure in 10 ~ 15 Pa, power in 5 500 ~ 6 500 W is suitable for industrial production because a-Si etching uniformity is very stable. Etching rate and uniformity of a-Si is more sensitive to etching gas ratio. When SF6∶ HCl = 800∶2 800 mL/min , the etching uniformity of a-Si is the best. Gas exhausting from corners can maintain the plasma concentration obvious, which is conducive to enhance the uniformity of plasma etching. Gas exhausting from around will undermine plasma concentration and thus undermine the uniformity of a-Si etching.

张立祥, 王海涛, 王尤海, 夏庆峰. 排气方式及工艺参数对等离子体刻蚀a-Si均一性的影响[J]. 液晶与显示, 2016, 31(12): 1112. ZhANG Li-xiang, WANG Hai-tao, WANG You-hai, XIA Qing-feng. Influence of exhaust mode and process on uniformity of plasma etching a-Si[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(12): 1112.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!