PbSe薄膜作为一种窄禁带半导体材料,因其具有优异的室温光电敏感性和响应度而被广泛用于制造硒化铅红外探测器。本文归纳和总结了 PbSe薄膜的性能特点、制备工艺、后期处理工艺、理论研究方向以及国内外 PbSe红外探测器的研究现状等内容,并在此基础上,探讨了 PbSe红外探测薄膜材料及器件未来可能的发展方向。

Lead selenide thin films are typical narrow band gap materials, which are widely used as the photosensors in the infrared detectors due to their excellent photoelectric sensitivity and responsivity even at room temperature. The typical properties, preparation technologies, post-treatment methods, theoretical researches and lead selenide infrared detectors research status of the lead selenide thin films are concluded and summarized in this paper. Besides, the future development directions of lead selenide thin films are discussed based on the conclusions.