针对化学机械抛光工艺对碲镉汞材料所产生的亚表面损伤层进行了研究。利用椭圆偏振光谱方法对经过腐蚀剥层的碲镉汞材料表面进行了光学表征, 认为化学机械抛光工艺造成的亚表面损伤层的深度大概为抛光工艺中所使用研磨颗粒直径的15~20倍。通过少子寿命表征和光导器件性能的对比测试, 认为将该亚表面损伤层完全去除后, 材料的少子寿命和器件的光电性能会得到明显的提高。

Study of the sub-surface damage induced by chemical-mechanical polishing method has been carried out for HgCdTe material. The optical characterization was performed for the surface after repeated step removal by wet etching using spectroscopic ellipsometry. It was found that the depth of sub-surface damage layer was about 15-20 times of the diameter of the abrasive particles. Through the comparison of the minority carrier lifetime and performance of the ultimate photoconductive detectors, it was considered that an obvious improvement could be achieved by a complete removal of this sub-surface damage layer.