Chinese Optics Letters, 2016, 14 (12): 123001, Published Online: Aug. 2, 2018   

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy Download: 696次

Author Affiliations
1 Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
2 Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy (Jilin University), Changchun 130012, China
3 Aviation University of Air Force, Changchun 130021, China
Abstract
We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor (Ge and Si) plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity. The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at 589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.

Yang Liu, Yue Tong, Suyu Li, Ying Wang, Anmin Chen, Mingxing Jin. Effect of sample temperature on laser-induced semiconductor plasma spectroscopy[J]. Chinese Optics Letters, 2016, 14(12): 123001.

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