首页 > 论文 > Photonics Research > 5卷 > 1期(pp:22-26)

Image lithography in telluride suboxide thin film through controlling “virtual” bandgap

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

Abstract

In this work, TeO0.7 thin films were prepared by the reactive magnetron-controlling sputtering method. Complex gray-scale patterns were successfully fabricated on TeO0.7 thin films through the laser direct writing method. The structural origin of TeO0.7 thin film was investigated for gray-scale pattern formation. It is found that multiple gray-scale levels are dependent on the “virtual” bandgap energy of TeO0.7 thin films. The bandgap energy changes lead to refractive index and reflectivity difference. Thus, gray-scale tones can be formed. By accurately controlling laser energy, various “virtual” bandgaps can be generated in TeO0.7 thin films, and colorful gray-scale levels can be formed. Experimental results indicate that TeO0.7 thin film can be used as micro/nano image writing material.

广告组1 - 空间光调制器+DMD
补充资料

DOI:10.1364/PRJ.5.000022

基金项目:National Natural Science Foundation of China (NSFC) (51672292, 61627826, 61137002).

收稿日期:2016-10-03

录用日期:2016-11-20

网络出版日期:--

作者单位    点击查看

Tao Wei:Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, China
Jingsong Wei:Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Kui Zhang:Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Long Zhang:Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, Chinae-mail: lzhang@siom.ac.cn

联系人作者:Jingsong Wei(weijingsong@siom.ac.cn)

【1】T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuoustone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).

【2】C. F. Guo, S. Cao, P. Jiang, Y. Fang, J. Zhang, Y. Fan, Y. Wang, W. Xu, Z. Zhao, and Q. Liu, “Gray-scale photomask fabricated by laser direct writing in nano-films,” Opt. Express 17, 19981–19987 (2009).

【3】A. Kovalskiy, “Chalcogenide glass e-beam and photoresists for ultrathin gray-scale patterning,” J. Micro/Nanolithogr. MEMS MOEMS 8, 043012 (2009).

【4】R. Wang, J. Wei, and Y. Fan, “Chalcogenide phase-change thin films used as gray-scale photolithography materials,” Opt. Express 22, 4973–4984 (2014).

【5】J. Zhang, J. Miao, C. Guo, Y. Tian, Y. Wang, and Q. Liu, “Microoptical elements fabricated by metal-transparent-metallicoxides gray-scale photomasks,” Appl. Opt. 51, 6606–6611 (2012).

【6】S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).

【7】A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).

【8】C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).

【9】K. Zhang, J. Lin, and Y. Wang, “Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films,” Chin. Opt. Lett. 13, 121601 (2015).

【10】S. Senkader and C. D. Wright, “Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices,” J. Appl. Phys. 95, 504–511 (2004).

【11】T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).

【12】H. Li, Y. Geng, and Y. Wu, “Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography,” Appl. Phys. A 107, 221–225 (2012).

【13】C. Deng, Y. Geng, and Y. Wu, “XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide,” Proc. SPIE 8782, 87820N (2013).

【14】C. Deng, Y. Geng, and Y. Wu, “Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium,” Appl. Phys. A 104, 1091–1097 (2011).

【15】X. Zhang and J. Wei, “Direct detection of the transient superresolution effect of nonlinear saturation absorption thin films,” Photon. Res. 3, 100–105 (2015).

【16】J. Liu and J. Wei, “Optical nonlinear absorption characteristics of AgInSbTe phase change thin films,” J. Appl. Phys. 106, 083112 (2009).

【17】L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).

【18】E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOxbased film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).

【19】K. Kimura, “Optical recording materials based on TeOx films,” Jpn. J. Appl. Phys. 28, 810–813 (1989).

【20】M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).

【21】M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).

【22】W. Y. Lee, “Nanosecond pulsed laser-induced segregation of Te in TeOx films,” J. Vac. Sci. Technol. A 4, 2988–2992 (1986).

【23】I. Podolesheva, “Thermally induced changes in TeOx thin layers,” J. Vac. Sci. Technol. A 12, 393–398 (1994).

【24】E. R. Shaaban, “Optical constants and fitted transmittance spectra of varies thickness of polycrystalline ZnSe thin films in terms of spectroscopic ellipsometry,” J. Alloys Compd. 563, 274–279 (2013).

引用该论文

Tao Wei, Jingsong Wei, Kui Zhang, and Long Zhang, "Image lithography in telluride suboxide thin film through controlling “virtual” bandgap," Photonics Research 5(1), 22-26 (2017)

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF