通过对OTFT绝缘层SiO2表面分别采用十八烷基三氯硅烷(OTS)处理和原子层沉积薄层氧化铝的修饰方式，制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大，但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后，器件的迁移率比修饰前分别增大了4倍和9倍，而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm2/( V·s)，开关比可达6.0×106。

OTFT devices were fabricated through inkjet printing active layer on SiO2 dielectric. To improve the device performance, SiO2 layer was modified with octadecyltrichlorosilane (OTS) or a thin layer of Al2O3 (1 nm) by atomic layer deposition. The surface morphology, contact angle of PDVT-8 solution on the dielectric layer, and the crystalline of the inkjet printing active layers were examined. The surface morphology of the modified dielectric layer is slightly various with SiO2 layer, while the contact angle and crystalline of the inkjet printing active layer change significantly. For OTS-treated dielectric layer and ALD Al2O3-treated dielectric layer, the mobility increases 4 times and 9 times, while the on/off current ratio increases 1 order of magnitude and 4 orders of magnitude, respectively, The maximum value of mobility and the on/off current ratio are 0.35 cm2/(V·s) and 6.0×106.