建立典型半导体器件系统电磁脉冲与剂量率综合效应计算模型,对在瞬态X射线辐照下电缆末端典型n+-p-n-n+结构的双极晶体管负载的系统电磁脉冲与剂量率综合效应进行研究,得到了综合效应现象,分析了综合效应机理,总结了综合效应规律。在系统电磁脉冲与剂量率综合效应作用下,双极晶体管内部，由于载流子数量剧增,其反向击穿阈值降低,综合效应比单一效应更易造成双极晶体管的毁伤。编制的系统电磁脉冲与剂量率综合效应计算程序可用于分析电子学系统中其他类型半导体器件的效应机理与规律。

Using the calculation program for the semiconductor device’s system-generated electromagnetic pulse(SGEMP) and dose rate combined effect, we analysed the combined effect of the cable’s BJT load when the cable was radiated by X-ray. This paper presents the feature and the law of the combined effect of SGEMP and dose rate. Under the combined effect, the reverse breakdown voltage reduced as the quantities of carrier in the BJT increased rapidly. The damage of BJT occurs more easily under the combined effect than under the SGEMP effect or the dose rate effect. The calculation program for the SGEMP and dose rate effect could be used for analysing the effect mechanism and law of other semiconductor devices.