Chinese Optics Letters, 2017, 15 (6): 062401, Published Online: Jul. 20, 2018
Optical rectification and Pockels effect as a method to detect the properties of Si surfaces 
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240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces 190.4720 Optical nonlinearities of condensed matter
Abstract
The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.
Qi Wang, Li Zhang, Xin Wang, Haiyan Quan, Zhanguo Chen, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Shaowu Chen. Optical rectification and Pockels effect as a method to detect the properties of Si surfaces[J]. Chinese Optics Letters, 2017, 15(6): 062401.
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