半导体光电, 2017, 38 (1): 8, 网络出版: 2017-03-29  

锗基InAs量子点激光器的腔面失效及再生的研究

Study on Cavity Surface Damage and Recovery of Ge-based InAs QD Lasers
作者单位
中国科学院上海微系统与信息技术研究所, 上海 200050
摘要
围绕锗基InAs量子点激光器, 开展了激光器腔面失效及再生的研究。研究并分析了灾变性光学镜面损伤产生的机理及其对激光器腔面的影响, 开展了腔面再生研究, 发展了一套创新性的腔面再生工艺并实现了失效的锗基InAs量子点激光器的再生。根据锗基InAs量子点激光器材料结构设计腐蚀工艺, 通过选择性腐蚀在激光器腔面制备出悬臂结构, 采用细针解理使悬臂结构自然解理, 获得新的激光器谐振腔面, 失效激光器重新工作。对比了激光器失效前和再生后的工作性能, 结果表明因灾变性光学镜面损伤而失效的锗基InAs量子点激光器获得全新的谐振腔面, 锗基激光器器件性能和失效前相当。
Abstract
Focused on Ge-based InAs QD lasers, influence of catastrophic optical damage (COD) on InAs QD lasers was investigated. Based on the study, a new process for cavity surface recovering of edge emitting lasers damaged by COD was presented, thus the InAs quantum dot laser on Ge damaged by COD was restored successfully. The corrosion process was designed according to material structure of Ge-based InAs quantum dot laser, and cantilever structure was prepared on the laser cavity surface by using selective corrosion. By using fine needle cleavage, the cantilever structure was naturally cleavaged, thus a new laser resonant cavity surface was obtained, and the failure laser was reactivated. The performance of the lasers before failure and after regeneration was compared, and it indicated that the Ge-based InAs quantum dot lasers which are disabled by catastrophic optical damage obtain new cavity surface. And the performance of Ge-based laser devices is almost the same before and after failure.

王亚楠, 李耀耀, 王朋, 曹春芳, 朱忠赟珅, 王庶民. 锗基InAs量子点激光器的腔面失效及再生的研究[J]. 半导体光电, 2017, 38(1): 8. WANG Yanan, LI Yaoyao, WANG Peng, CAO Chunfang, ZHU Zhongyunshen, WANG Shumin. Study on Cavity Surface Damage and Recovery of Ge-based InAs QD Lasers[J]. Semiconductor Optoelectronics, 2017, 38(1): 8.

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