本文以硅溶胶为磨料颗粒、次氯酸钠( NaClO)为氧化剂制备适用于 CZT晶片的化学机械抛光液。采用 XPS能谱分析 CZT表面元素化学态, 研究 CZT化学机械抛光过程中抛光液的化学作用机理, 使用激光干涉仪、原子力显微镜研究抛光液中 NaClO含量对晶片抛光速率、晶片表面 PV值及表面粗糙度 Ra的影响。结果表明, 硅溶胶 -次氯酸钠抛光液通过与 CZT晶体中 Te单质或 CdTe发生化学反应, 生成 TeO2。随后在一定压力下, 抛光盘与 CZT晶片发生相对运动, 并在硅溶胶磨料颗粒的辅助作用下去除反应物。当 NaClO含量在 2%～10%时, 随着 NaClO含量的增加, 晶片表面 PV值和粗糙度 Ra值先降低后升高, 去除速率则随着 NaClO含量的增加而增加。NaClO含量为 6%时, PV值和 Ra值最低, 得到的晶片表面质量最好。

In this paper, silica solution and NaClO were chosen as raw materials to prepare chemical-mechanical polishing slurry for CdZnTe crystal. The mechanism of chemical-mechanical polishing slurry to CZT was researched by analyzing the elemental state of the CZT surface with X-ray Photoelectron Spectrometer (XPS). Laser Interferometer and Atomic Force Microscope (AFM) were used to investigate the effect of NaClO content on polishing rate, surface flatness and roughness. The results show that the chemical-mechanical polishing slurry mainly reacts with Te or CdTe, and TeO2 is obtained. Then at a certain pressure, there is relative motion between polishing discs and CZT wafer, and the reaction film is removed under a supporting role of SiO2 particles, which make the surface become smooth. When the NaClO content ranges from 2% to 10%, with the increase of NaClO, the PV value and roughness of CZT surface decrease at first and then increase, while the polishing rate increases all the time. When the NaClO content is 6%, the PV value and roughness reach the minimum, and the polishing surface of CdZnTe with high quality is obtained.