太赫兹源的输出功率是限制太赫兹技术远距离应用的重要参数。为了实现高效的太赫兹倍频器, 基于高频特性下肖特基二极管的有源区电气模型建模方法, 利用指标参数不同的两种肖特基二极管, 研制出了两种170 GHz平衡式倍频器。所采用的肖特基二极管有源结区模型完善地考虑了二极管IV特性, 载流子饱和速率限制, 直流串联电阻以及趋肤效应等特性。通过对两种倍频器仿真结果进行对比, 完备地分析了二极管主要指标参数对倍频器性能的影响。最后测试结果显示两种平衡式170 GHz倍频器在155~178 GHz工作带宽内的最高倍频效率分别大于11%和24%, 最高输出功率分别大于15 mW和25 mW。从仿真和测试结果表示, 采用的肖特基二极管建模方法和平衡式倍频器结构适用于研制高效的太赫兹倍频器。

The output power of terahertz resource is a critical parameter to limit the long range application of terahertz technology. To accomplish the high efficiency terahertz multiplier, two high-efficiency 170 GHz balanced doublers were built using the two planar Schottky diodes with diverse electrical specification. The employed equal circuit diode model, based on the developed high-frequency characteristic modeling, considered the IV characteristics, the limits drift velocity saturation of carries, DC series resistance and skin effect simultaneously. From the comparison and analysis of the simulated data, the impact of diode electrical parameter on the doubler performance was discussed. Test data show that the two 170 GHz balanced doublers show 11% and 24% highest efficiency respectively, 15 mW and 25 mW output power correspondingly across a 155-178 GHz band. As shown in measured result, the employed Schottky diode modeling and balance structure is suitable option to design high efficiency terahertz multiplier.