在低压金属有机化学气相沉积生长工艺中, 对用于制作850nm垂直腔面发射激光器件的GaAs/AlxGa1－xAs多量子阱外延结构的生长温度、反应室压力、总载气流量以及生长速度等主要工艺参量进行优化, 并进行了完整外延结构的生长.实验结果表明: 在700℃条件下, 得到多种组分的GaAs/AlxGa1－xAs多量子阱结构,通过光致发光谱对比测试得到的最佳组分x为0.24, 同时得到良好的表面形貌, 最终确定的最佳生长速度为0.34~0.511nm/s.

The multiple quantum well structure for 850nm vertical cavity surface emitting laser device based on GaAs/AlxGa1－xAs has been design in this paper. The major process parameters of Low Press-Metal Organic Chemical Vapor Deposition (LP-MOCVD), such as the growth temperature, the reaction chamber pressure, total carrier gas flow rate and so on, have been optimized and the growth of complete epitaxial structure has been carried out. The experimental results showed that components of the GaAs/AlxGa1－xAs multiple quantum well structure devices was obtained under the condition of 700℃, the best composition x is 0.24 by the Photoluminescence (PL) spectrum comparison test and a good surface morphology of the multiple quantum well structure had been obtained. The optimum growth rategrowth rate was 0.34~0.511 nm/s ultimately.