激光与光电子学进展, 2017, 54 (5): 052301, 网络出版: 2017-05-03
复合分布式布拉格反射镜结构AlGaInP发光二极管 下载: 679次
AlGaInP Light Emitting Diode with Coupled Distributed Bragg Reflector Structure
光学器件 复合分布式布拉格反射镜 输出光功率 外量子效率 optical devices AlGaInP AlGaInP coupled distributed Bragg reflector output optical power external quantum efficiency
摘要
采用金属有机化学气相沉积系统外延了具有三个不同反射中心波长的AlAs/Al0.5Ga0.5As复合分布式布拉格反射镜(DBR), 利用透射电镜、X射线衍射仪表征其结构、厚度和组分, 利用白光反射谱表征其反射谱强度和带宽。结果表明:该复合DBR比常规DBR和两个反射中心波长复合DBR具有更高的反射谱强度和更宽的带宽。利用该复合DBR制备了AlGaInP发光二级管(LED), 尺寸6.0 mil×6.0 mil(1 mil=0.0254 mm), 并在20 mA测试电流下测得其输出光功率为3.54 mW, 发光效率为17.26 lm/W, 外量子效率为8.77%, 相比常规DBR制备LED输出光功率提高35.1%, 相比两个反射中心波长复合DBR制备LED输出光功率提高11.3%。说明具有三个反射中心波长的复合DBR更大幅度地提升了AlGaInP 发光二极管的出光效率。
Abstract
An AlAs/Al0.5Ga0.5As coupled distributed Bragg reflector (DBR) with three different reflection center wavelengths is fabricated by the metal-organic chemical vapor deposition system. The transmission electron microscopy and X-ray diffractometer are used to characterize the structure, thickness, and composition. The white light reflectance spectroscopy is used to characterize the intensity and bandwidth of the reflection spectrum. The result shows that coupled DBR has higher reflectance spectrum intensity and wider bandwidth compared to conventional DBR and coupled DBR with two reflection center wavelengths. AlGaInP light emitting diode (LED) with coupled DBR is prepared, and the size is 6.0 mil×6.0 mil (1 mil=0.0254 mm). Under the measuring current of 20 mA, the output optical power is 3.54 mW, the luminous efficiency is 17.26 lm/W, and the external quantum efficiency is 8.77%. The output power of LED is 35.1% higher than that of conventional DBR, and 11.3% higher than that of the coupled DBR with two reflection center wavelengths. It shows that the coupled DBR with three reflection center wavelengths can remarkably increase the light extraction efficiency of an AlGaInP LED.
郑元宇, 吴超瑜, 林峰, 伍明跃, 周启伦, 李水清. 复合分布式布拉格反射镜结构AlGaInP发光二极管[J]. 激光与光电子学进展, 2017, 54(5): 052301. Zheng Yuanyu, Wu Chaoyu, Lin Feng, Wu Mingyue, Zhou Qilun, Li Shuiqing. AlGaInP Light Emitting Diode with Coupled Distributed Bragg Reflector Structure[J]. Laser & Optoelectronics Progress, 2017, 54(5): 052301.