Collection Of theses on high power laser and plasma physics, 2013, 11 (1): 034305, Published Online: Jun. 2, 2017  

Influence of adsorption kinetics on stress evolution in magnetron-sputtered SiO2 and SiNx films

Author Affiliations
1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China
2 Graduate School of Chinese Academy of Sciences, Beijing 100049, China
3 Shanghai Institute of Laser Plasma, Shanghai 201800, China
Abstract
An in situ multi-beam optical sensor system was used to monitor and analyze the force per unit width (F/w) and stress evolution during several stages in magnetron-sputtered SiO2 and SiNx films. Stress was observed to relieve quickly after interrupt and recover rapidly after growth resumption in both films. Stress relief was reversible in SiO2 film but partial reversible in SiNx film. Stress relief results from both physical and chemical adsorption. Stress recovery is caused by physical desorption. And chemical adsorption results in an irreversible stress relief component. No chemical adsorption occurs in SiO2 film because of the stable chemical structure. The relationship between adsorption kinetics and films’ mechanical behavior is revealed.

Jingping Li, Ming Fang, Hongbo He, Jianda Shao, Zhaoyang Li. Influence of adsorption kinetics on stress evolution in magnetron-sputtered SiO2 and SiNx films[J]. Collection Of theses on high power laser and plasma physics, 2013, 11(1): 034305.

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