报道了一种高性能的3英寸磷化铟双异质结双极型晶体管工艺.发射极尺寸为0.5 μm×5 μm的磷化铟双异质结双极型晶体管, 电流增益截止频率以及最高振荡频率分别达到350 GHz以及532 GHz, 击穿电压4.8 V.基于该工艺研制了114 GHz静态分频器以及170 GHz动态分频器两款工艺验证电路, 这两款电路的工作频率均处于国内领先水平.

A high performance 3-inch 0.5 μm InP double heterojunction bipolar transistor (DHBT) technology with three interconnect layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the needed performance. The 0.5 μm×5μm InP DHBTs demonstrated ft = 350 GHz, fmax= 532 GHz and BVCEO= 4.8 V, which were modeled using Agilent-HBT large signal model. Static and dynamic frequency dividers designed and fabricated with this technology have demonstrated maximum clock frequencies of 114 GHz and 170 GHz, respectively. The ultra high speed 0.5 μm InP DHBT technology offers a combination of ultra high speed and high breakdown voltage, which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits.