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4×25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique

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Abstract

We use the selective area growth (SAG) technique to monolithically integrate InP-based 4-channel arrayed waveguide gratings (AWGs) with uni-traveling carrier photodiode arrays at the O-band. Two kinds of channel spacing demultiplexers of 20 nm and 800 GHz are adopted for potential 100 Gbps coarse wavelength division multiplexing and local area network wavelength division multiplexing systems, with an evanescent coupling plan to facilitate the SAG technique into device fabrication. The monolithic chips in both channel spacings exhibit uniform bandwidths over 25 GHz and a photodiode responsivity of 0.81 A/W for each channel, in agreement with the simulated quantum efficiency of 80%. Cross talk levels are below ?20 dB for both channel spacing chips.<录用日期>2017-05-18<上网时间>2017-06-13

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DOI:10.3788/col201715.082301

所属栏目:Optical devices

基金项目:This work was supported by the National High-Tech Research and Development Program of China (No. 2015AA016902) and the National Natural Science Foundation of China (Nos. 61635010, 61674136, and 61435002).

收稿日期:2017-03-12

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Han Ye:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Qin Han:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSchool of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Qianqian Lv:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Pan Pan:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Junming An:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Xiaohong Yang:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Yubing Wang:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Rongrui Liu:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

联系人作者:hanqin@semi.ac.cn;

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引用该论文

Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu, "4×25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique," Chinese Optics Letters 15(8), 082301 (2017)

CrossRef返回数据

【1】Chao-Yi Li, Jun-Ming An, Jiu-Qi Wang, Liang-Liang Wang, Jia-Shun Zhang, Jian-Guang Li, Yuan-Da Wu, Yue Wang, Xiao-Jie Yin, Yong Li, Fei Zhong. The 8×10 GHz Receiver Optical Subassembly Based on Silica Hybrid Integration Technology for Data Center Interconnection. Chinese Physics Letters, 2017, 34(10): 104202 

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