以微孔硅阵列为模板, 高纯CuI粉末为原料, 采用压力注入法, 成功制备了具有单分散微柱结构的像素化CuI闪烁转换屏。 扫描电子显微镜(SEM)与X射线衍射(XRD)的测试结果表明, 所制备的转换屏中CuI微柱连续、 致密, 微柱柱径约为2.5 μm、 间隔约为1.5 μm、 柱长约为80 μm, 并具有良好的γ相晶体结构。 在X射线激发下, 所制备的像素化γ-CuI闪烁转换屏具有峰值波长位于680 nm附近的红光慢发射带; 掺碘后, 该发射带被较大幅度的抑制, 同时出现了峰值波长位于432 nm 的快发光峰; 当碘掺杂含量达到10 Wt％时, 峰值波长位于680 nm附近的红光慢发射带被完全抑制, 只存在峰值波长位于432 nm的快发光峰。 采用刃边法测量了所制备的像素化γ-CuI闪烁屏的空间分辨率, 结果显示其分辨率可达38 lp·mm-1, 表明该闪烁屏除拥有超快时间响应特性外, 兼具很高的空间分辨本领, 在X射线成像方面具有独特的应用价值。

The pixelated CuI scintillation conversion screens which have a monodisperse micro-columnar structure were fabricated with pressure-injection method using the high-purity CuI powder and oxidized silicon micropore arrays. The results of scanning electron microscopy and X-ray diffraction show that CuI micro-columns are continuous and dense with the crystal lattice of (-phases. Their diameters, spaces and depths are about 2.5, 1.5 and 80 μm, respectively. X-ray excited luminescence (XEL) reveals that the as-prepared γ-CuI scintillation screens have an emission band near 680 nm, which has a comparatively slow decay time. After iodine-doping especially at the content of 10 Wt%, the emission band near 680 nm is effectively suppressed with an emission peak at 432 nm, which has an ultra-fast decay time. The spatial resolution of the pixelated γ-CuI scintillation conversion screens was measured with knife-edge method. The result shows that the resolution can reach to 38 lp·mm-1, which indicate that the pixelated γ-CuI scintillation screens have excellent spatial resolution with ultra-fast time response and it possess a unique value in X-ray imaging.