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GaSb和GaInSb晶体制备工艺研究进展

Research Progress on Preparation Technology of GaSb and GaInSb Crystal

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摘要

介绍了GaSb单晶的制备方法,包括提拉(CZ)法、垂直布里奇曼(VB)法、水平布里奇曼(HB)法、垂直定向凝固(VDS)法和垂直梯度冷凝(VGF)法,总结了它们的优缺点。研究结果表明,VB法、VDS法和VGF法更适合GaSb单晶的生长。进一步介绍了三元合金GaInSb晶体生长工艺的研究进展,微重力环境可以有效抑制晶体中In元素的成分偏析,提高晶体的均匀性。简单介绍了GaSb单晶材料在器件制作方面的应用,展望了GaInSb晶体材料的发展前景。

Abstract

The preparation methods of GaSb single crystal are introduced, which include the Czochralski (CZ) method, the vertical Bridgman (VB) method, the horizontal Bridgman (HB) method, the vertical directional solidification (VDS) method, and the vertical gradient freeze (VGF) method. Their merits and demerits are also summarized. Research results show that the VB, VDS, and VGF methods are more suitable for the growth of GaSb single crystal. Research progress of the ternary alloy GaInSb crystal growth technology is introduced. The microgravity environment can effectively suppress the component segregation of In in the crystal and improve the uniformity of the crystal. The applications of GaSb single crystal materials in the fabrication of devices are introduced, and the development of GaInSb materials is prospected.

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中图分类号:TN305.1

DOI:10.3788/lop54.070007

所属栏目:综述

基金项目:国家自然科学基金(50972085)

收稿日期:2017-02-15

修改稿日期:2017-03-15

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作者单位    点击查看

王晋伟:天津工业大学材料科学与工程学院, 天津 300387
刘俊成:天津工业大学材料科学与工程学院, 天津 300387

联系人作者:王晋伟(1163878467@qq.com)

备注:王晋伟(1993—),男,硕士研究生,主要从事半导体材料、光电子器件方面的研究。

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引用该论文

Wang Jinwei,Liu Juncheng. Research Progress on Preparation Technology of GaSb and GaInSb Crystal[J]. Laser & Optoelectronics Progress, 2017, 54(7): 070007

王晋伟,刘俊成. GaSb和GaInSb晶体制备工艺研究进展[J]. 激光与光电子学进展, 2017, 54(7): 070007

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