Chinese Optics Letters, 2017, 15 (9): 091401, Published Online: Jul. 19, 2018  

Comparison of high-energy multi-pass Ti:sapphire amplifiers with a different Ti-dopant concentration Download: 906次

Author Affiliations
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100049, China
3 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Abstract
We experimentally compare the output abilities of lightly and heavily doped Ti:Sapphire (Ti:S) amplifiers with diameters as large as 150 mm. Although a lightly doped Ti:S is more favorable to overcome parasitic lasing (PL) and transverse amplified spontaneous emission (TASE), the self-phase-modulation (SPM) effect becomes more pronounced when a longer crystal is used. Recompression of the amplified, stretched pulses can be seriously affected by the SPM effect. We then propose a temporal multi-pulse pump scheme to suppress PL and TASE in a thin, heavily doped Ti:S crystal. This novel temporal multi-pulse pump technique can find potential applications in 10 PW chirped-pulse amplification laser systems.

Zebiao Gan, Xiaoyan Liang, Lianghong Yu, Jiaqi Hong, Ming Xu, Ying Hang, Ruxin Li. Comparison of high-energy multi-pass Ti:sapphire amplifiers with a different Ti-dopant concentration[J]. Chinese Optics Letters, 2017, 15(9): 091401.

引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!