采用化学溶液沉积法在Al2O3衬底上生长了MgxNi1-xMn2O4(MNM, x=0, 0.05, 0.10, 0.15, 0.20)薄膜.通过X射线衍射仪和场发射扫描电子显微镜研究了Mg掺杂浓度对MNM薄膜的结构特性的影响, MNM薄膜均匀致密, 具有良好的结晶性, 为单一立方尖晶石结构.变温电流-电压特性研究显示, MNM薄膜的电输运特性符合小极化子变程跳跃电导模型, 同时获得了不同Mg掺杂浓度的MNM薄膜的电阻率ρ、特征温度T0和电阻温度系数α. 研究结果表明, Mg的掺杂对MNM薄膜的结构和电学特性都有一定的影响.

The MgxNi1-xMn2O4(MNM x=0, 0.05, 0.10, 0.15, 0.20) films were grown on Al2O3 substrate by chemical solution deposition method. The effect of Mg doping on the structural properties of MNM thin films was studied by x-ray diffractomer and field emission scanning electron microscopy. The results show that the MNM films have a single cubic spinel structure and the films are smooth and uniform, which have good crystallinity. The electrical measurements show that the conduction of MNM thin films can be described by a variable range hopping model. The values of resistivity, characteristic temperature T0, temperature coefficient of resistance α for MNM thin films were obtained. The Mg concentration dependence of structural and electrical properties for MNM films was investigated.