光电子快报(英文版), 2013, 9 (4): 263, Published Online: Oct. 12, 2017
Effects of electrodes on resistance switching characteristics of TiO2for flexible memory
Abstract
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103times of substrate bending, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.
ZHANG Kai-liang, WU Chang-qiang, WANG Fang, MIAO Yin-ping, LIU Kai, ZHAO Jin-shi. Effects of electrodes on resistance switching characteristics of TiO2for flexible memory[J]. 光电子快报(英文版), 2013, 9(4): 263.