光电子快报(英文版), 2014, 10 (3): 194, Published Online: Oct. 12, 2017  

Preparation of multi-wavelength infrared laser diode

Author Affiliations
Shijiazhuang New Technology Application Institute, Mechanical Engineering College, Shijiazhuang 050003, China
Abstract
We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths (865 nm, 905 nm and 1064 nm) and two working modes (pulse and single). The preparation technology of the diode includes two key processes: heat-sink and packaging processing technique to package four different chips on a same heat-sink. The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.

XUE Ming-xi, CHEN Zhi-bin, WANG Wei-ming, LIU Xian-hong, SONG Yan, ZHANG Chao, HOU Zhang-ya. Preparation of multi-wavelength infrared laser diode[J]. 光电子快报(英文版), 2014, 10(3): 194.

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