光电子快报(英文版), 2014, 10 (4): 250, Published Online: Jul. 13, 2020   

Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

Author Affiliations
1 Department of Electronic Information, Zhao Qing University, Zhaoqing 526061, China
2 Institute of Optoelectronic Material and Technology, South China Normal University,Guangzhou 510631, China
Abstract
The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. Thesimulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, whichis mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reportedexperimental results perfectly.

CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. 光电子快报(英文版), 2014, 10(4): 250.

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