光电子快报(英文版), 2014, 10 (4): 250, Published Online: Jul. 13, 2020
Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes
Abstract
The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. Thesimulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, whichis mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reportedexperimental results perfectly.
CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. 光电子快报(英文版), 2014, 10(4): 250.