光电子快报(英文版), 2014, 10 (4): 269, Published Online: Oct. 12, 2017   

Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP

Author Affiliations
1 Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Abstract
InAs0.6P0.4epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4epilayers.

LIU Xia, CAO Lian-zhen, SONG Hang, JIANG Hong. Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP[J]. 光电子快报(英文版), 2014, 10(4): 269.

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