光电子快报(英文版), 2014, 10 (6): 423, Published Online: Oct. 12, 2017   

C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate

Author Affiliations
1 Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China
2 Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
Abstract
In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4and Nd3+:GdVO4are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 mW and 852 mW at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the LiB3O5frequency doubling crystal.

LI Zuo-han, PENG Ji-ying, ZHENG Yi, YANG Ye, KOU Jin-hua. C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate[J]. 光电子快报(英文版), 2014, 10(6): 423.

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