光电子快报(英文版), 2015, 11 (5): 348, Published Online: Oct. 12, 2017   

Effects of Mg-doping concentration on the characteristics of InGaN based solar cells

Author Affiliations
Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China
Abstract
A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm-3, 5×1017 cm-3, 2×1018 cm-3, 4×1018 cm-3and 7×1018 cm-3in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×1018 cm-3, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm-3exhibits the highest conversion efficiency.

LU Gang, WANG Bo, GE Yun-wang. Effects of Mg-doping concentration on the characteristics of InGaN based solar cells[J]. 光电子快报(英文版), 2015, 11(5): 348.

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