光电子快报(英文版), 2016, 12 (1): 5, Published Online: Oct. 12, 2017  

Enhanced photoluminescence from porous silicon microcavities by rare earth doping

Author Affiliations
1 School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
2 School of Information Science and Engineering, Xinjiang University, Urumqi 830046, China
3 Department of Physics, Ningbo University, Ningbo 315211, China
Abstract
The photoluminescence (PL) properties of porous silicon microcavities (PSMs) in the visible range at room temperature are improved by doping the rare earth ytterbium (Yb) into PSMs prepared by the electrochemical etching method. It is observed that PSMs doped with the rare earth have an emission band around 630 nm. Compared with the single- layer porous silicon (PS) film, the PSMs doped with Yb have narrower and stronger PL spectrum.

SUN Di-fei, JIA Zhen-hong, ZHOU Jun. Enhanced photoluminescence from porous silicon microcavities by rare earth doping[J]. 光电子快报(英文版), 2016, 12(1): 5.

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