光电子快报(英文版), 2016, 12 (1): 8, Published Online: Oct. 12, 2017
Preparation and characterization of In0.82Ga0.18As PIN photodetectors
Abstract
Using two-step growth method and buffer layer annealing treatment, the double heterojunction structures of In0.82Ga0.18epilayer capped with InAs0.6P0.4layer were prepared on InP substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). Based on the high quality In0.82Ga0.18As structures, the In0.82Ga0.18PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology, and the device performance was investigated in detail. The typical dark current at the reverse bias VR=10 mV and the resistance area product R0A are 5.02 μA and 0.29 Ω·cm2at 296 K and 5.98 nA and 405.2 Ω·cm2at 116 K, respectively. The calculated peak detectivities of the In0.82Ga0.18As photodetector are 1.21×1010cm·Hz1/2/W at 296 K and 4.39×1011cm·Hz1/2/W at 116 K respectively, where the quantum efficiency η=0.7 at peak wavelength is supposed. The results show that the detection performance of In0.82Ga0.18As prepared by two-step growth method can be improved greatly.
LIU Xia, CAO Lian-zhen, LU Huai-xin, LI Ying-de, SONG Hang, JIANG Hong. Preparation and characterization of In0.82Ga0.18As PIN photodetectors[J]. 光电子快报(英文版), 2016, 12(1): 8.