研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性。当曲率半径从15 mm变到3 mm时, 在拉伸弯曲状态下, 阈值电压和平坦时保持一致(Vth＝-1.34 V), 迁移率μsat从45.65 cm2/(V·s)降到45.17 cm2/(V·s), 开关比增大; 在压缩弯曲状态下, 转移特性曲线和平坦状态保持了非常好的一致性。在最小弯曲半径为3 mm时, 进行了正负偏压稳定性测试, 结果表明, 器件依然具有很好的稳定性。

The bias stability of the flexible thin-film transistors under various bending radii was investigated. The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate. The changing region of the bending radius was from 15 mm to 3 mm. For the stretch bending, the threshold voltage kept the same with the flat(Vth＝-1.34 V), the mobility reduced from 45.65 cm2/(V·s) to 45.17 cm2/(V·s), and Ion/Ioff increased. For the compress bending, the transfer curve well kept the same with the flat. When the minimum bending radius was 3 mm, the device was tested under the positive and negative bias stress, and showed good stability. The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.