为得到工业需要的大电流高重频方波脉冲，分析并改进了半导体全控型Marx发生器，在充电的同时实现了截尾功能。设计采用新型半浮栅结构晶体管 (SFGT)作为主开关，可产生kV高压、百A大电流、高重频的方波脉冲。优化了电路结构，解决直流充电源受脉冲电源放电电压冲击问题。研制得到电流100 A、频率4 kHz、脉宽4 μs、负高压6 kV、上升沿下降沿均在80 ns内的方波脉冲发生器。研究了相应的SFGT磁芯隔离驱动电路，结合了SFGT栅极并联自主电容隔离驱动和IR2110的半桥驱动电路，并对半桥上的MOS管的栅极等效电路进行了理论分析，驱动电路具有抗干扰能力强且脉宽调节范围大的特点。

In order to obtain high current high frequency square wave pulse used in industry, we analyzed and improved the semiconductor full controlled Marx, in charge of the implementation and truncated function. Using the new semi-floating-gate SFGT transistor structure as main switch, the design can produce kV high voltage, high current and high frequency square wave pulse. At the same time, the circuit structure is optimized, and the stability of DC power supply to the pulse power supply is also optimized. The main work of this paper is as follows: first, we develop a square wave pulse generator with current 100 A, frequency 4 kHz, pulse width 4 μs, 6 kV negative high voltage and rising edge falling in 80 ns. Second, study the SFGT core isolation of the corresponding driving circuit with half bridge SFGT grid parallel independent capacitance isolation drive and IR2110 drive circuit, the equivalent circuit of half bridge gate and the MOS tube was analyzed, with strong anti-interference ability and wide pulse width modulation characteristics.