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脉冲溅射功率对含硅量子点SiCx薄膜的结构和光学特性的影响

Influence of Pulse Sputtering Power on the Structural and Optical Properties of SiCx Thin Films Containing Silicon Quantum Dots

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摘要

采用射频和脉冲磁控共溅射法并结合快速光热退火法制备了含硅量子点的SiCx薄膜.采用掠入射X射线衍射、喇曼光谱、紫外-可见-近红外分光光度计和透射电子显微镜对薄膜进行表征.研究了脉冲溅射功率对薄膜中硅量子点数量、尺寸、晶化率和薄膜光学带隙的影响.结果表明: 当溅射功率从70 W增至100 W时, 硅量子点数量增多, 尺寸增至5.33 nm, 晶化率增至68.67%, 而光学带隙则减至1.62 eV; 随着溅射功率进一步增至110 W时, 硅量子点数量减少, 尺寸减至5.12 nm, 晶化率降至55.13%, 而光学带隙却增至2.23 eV.在本实验条件下, 最佳溅射功率为100 W.

Abstract

In this paper, the SiCx thin films with silicon quantum dots were prepared by RF and pulse magnetron co-sputtering and rapid thermal annealing. The films were characterized by grazing incidence X-ray diffraction, Raman spectroscopy, UV/VIS/NIR spectrophotometer and transmission electron microscopy. The effects of pulse sputtering power on the number, size and crystallization rate of silicon quantum dots in the films and the optical bandgap of the films were investigated. The results show that with the increasing of sputtering power from 70 W to 100 W, the number of silicon quantum dots increased; the size increased to 5.33 nm; the crystallization rate increased to 68.67%; the optical band gap reduced to 1.62 eV. When the sputtering power increased further to 110 W, the number of silicon quantum dots reduced; the size reduced to 5.12 nm; the crystallization rate of thin film reduced to 55.13%; the optical band gap increased to 2.23 eV. In this experiment, the optimized sputtering power was 100 W.

Newport宣传-MKS新实验室计划
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中图分类号:O484.5

DOI:10.3788/gzxb20174612.1231002

基金项目:国家自然科学基金(No.51362031)和西南地区可再生能源研究与开发协同创新中心(No.05300205020516009)资助

收稿日期:2017-07-09

修改稿日期:2017-09-19

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赵飞:可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500云南师范大学 太阳能研究所, 昆明 650500
杨雯:可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500云南师范大学 太阳能研究所, 昆明 650500
莫镜辉:可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500云南师范大学 太阳能研究所, 昆明 650500
张志恒:可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500云南师范大学 太阳能研究所, 昆明 650500
杨培志:可再生能源材料先进技术与制备教育部重点实验室, 昆明 650500云南师范大学 太阳能研究所, 昆明 650500

联系人作者:赵飞(fzhaobs@126.com)

备注:赵飞(1990-), 男, 硕士研究生, 主要研究方向为碳化硅基硅量子点薄膜材料.

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引用该论文

ZHAO Fei,YANG Wen,MO Jing-hui,ZHANG Zhi-heng,YANG Pei-zhi. Influence of Pulse Sputtering Power on the Structural and Optical Properties of SiCx Thin Films Containing Silicon Quantum Dots[J]. ACTA PHOTONICA SINICA, 2017, 46(12): 1231002

赵飞,杨雯,莫镜辉,张志恒,杨培志. 脉冲溅射功率对含硅量子点SiCx薄膜的结构和光学特性的影响[J]. 光子学报, 2017, 46(12): 1231002

被引情况

【1】孙庆雨,孙喆禹,邢文超,孙德贵. 掺Ge氧化硅薄膜波导制备工艺与应力研究. 光子学报, 2018, 47(12): 1231003--1

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