采用射频和脉冲磁控共溅射法并结合快速光热退火法制备了含硅量子点的SiCx薄膜.采用掠入射X射线衍射、喇曼光谱、紫外-可见-近红外分光光度计和透射电子显微镜对薄膜进行表征.研究了脉冲溅射功率对薄膜中硅量子点数量、尺寸、晶化率和薄膜光学带隙的影响.结果表明: 当溅射功率从70 W增至100 W时, 硅量子点数量增多, 尺寸增至5.33 nm, 晶化率增至68.67%, 而光学带隙则减至1.62 eV; 随着溅射功率进一步增至110 W时, 硅量子点数量减少, 尺寸减至5.12 nm, 晶化率降至55.13%, 而光学带隙却增至2.23 eV.在本实验条件下, 最佳溅射功率为100 W.

In this paper, the SiCx thin films with silicon quantum dots were prepared by RF and pulse magnetron co-sputtering and rapid thermal annealing. The films were characterized by grazing incidence X-ray diffraction, Raman spectroscopy, UV/VIS/NIR spectrophotometer and transmission electron microscopy. The effects of pulse sputtering power on the number, size and crystallization rate of silicon quantum dots in the films and the optical bandgap of the films were investigated. The results show that with the increasing of sputtering power from 70 W to 100 W, the number of silicon quantum dots increased; the size increased to 5.33 nm; the crystallization rate increased to 68.67%; the optical band gap reduced to 1.62 eV. When the sputtering power increased further to 110 W, the number of silicon quantum dots reduced; the size reduced to 5.12 nm; the crystallization rate of thin film reduced to 55.13%; the optical band gap increased to 2.23 eV. In this experiment, the optimized sputtering power was 100 W.