为了优化镁铟锡氧薄膜晶体管(MITO-TFT)的性能, 采用磁控溅射法制备MITO-TFT并分别研究了退火温度和退火气氛(O2流量)对器件性能的影响。实验结果表明, O2流量为400 cm3/min、退火温度为750 ℃的MITO薄膜为非晶态, 且其对应薄膜晶体管有最佳性能, 其饱和迁移率为12.66 cm2/(V·s), 阈值电压为0.8 V, 开关比达到107。适当的退火处理可以有效减少缺陷与界面态密度, 并提高器件性能。

In order to optimize the performance of Mg-In-Sn-O thin film transistors (MITO-TFTs), MITO-TFTs were fabricated by radio frequency magnetron sputtering. The electrical properties on the effect of the annealing temperature and annealing ambient (O2 flow rate) were investigated. The 750 ℃ annealed MITO thin film with 400 cm3/min O2 flow is amorphous and the corresponding TFT shows best performance with saturation field effect mobility of 12.66 cm2/(V·s), threshold voltage of 0.8 V and on/off ratio reaches 107. Proper annealing will reduce defect and interface states density, improve the device performance effectively.