激光与光电子学进展, 2017, 54 (12): 121202, 网络出版: 2017-12-11   

残余应力对激光激发超声表面波技术检测二氧化硅体材料杨氏模量的影响 下载: 756次

Influence of Residual Stress on Young Modulus Detection of SiO2 Bulk Materials by Laser-Induced Surface Ultrasonic Wave Technique
作者单位
天津大学微电子学院, 天津 300072
摘要
在理想理论模型中引入了包含残余应力的等效弹性常数, 建立了二氧化硅的半无限大残余应力理论计算模型。研究了残余应力对激光激发超声表面波检测二氧化硅体材料杨氏模量的影响, 并提出了误差判断依据。结果表明, 当二氧化硅体材料的残余压应力小于900 MPa时, 相对误差小于5%, 残余应力的影响可以忽略; 当残余压应力大于900 MPa时, 相对误差大于5%, 此时应考虑残余应力的影响。
Abstract
With the introduction of the effective elastic constants including the residual stress in the ideal theoretical model, the half-infinite residual-stress theoretical calculation model of SiO2 is established. The influence of residual stress on the Young modulus detection of SiO2 bulk materials by the laser-induced surface ultrasonic wave technique is studied, and the error judgment basis is proposed. The results show that, when the residual compressive stress of SiO2 bulk materials is less than 900 MPa, the relative error is less than 5% and the influence of residual stress can be ignored. While when the residual compressive stress is more than 900 MPa, the error is more than 5%, and the influence of residual stress should be taken into account.

睢晓乐, 肖夏, 戚海洋, 孔涛. 残余应力对激光激发超声表面波技术检测二氧化硅体材料杨氏模量的影响[J]. 激光与光电子学进展, 2017, 54(12): 121202. Sui Xiaole, Xiao Xia, Qi Haiyang, Kong Tao. Influence of Residual Stress on Young Modulus Detection of SiO2 Bulk Materials by Laser-Induced Surface Ultrasonic Wave Technique[J]. Laser & Optoelectronics Progress, 2017, 54(12): 121202.

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